Paper Titles
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Experimental Analysis of 4H-SiC CMOS NOT Logic Gate Down to 100K
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Characterization of 4H-SiC Lateral MOSFETs up to 773 K
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Application of a New Method and Criterion for Analyzing Repetitive Surge Current in Commercial SiC Schottky Diodes
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Short-Circuit Reliability Analysis of SG-MOSFETs vs Planar 4H-SiC MOSFETs
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Impact of Active Cell Geometry on the Static Performance of 10-kV 4H-SiC JBS (Junction Barrier Schottky) Diodes
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Fowler-Nordheim Current at Negative Gate Bias in SiC MOSFETs
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Body Diode Reliability and Reverse Recovery Characteristics of Short Tapered SJ-MOSFET Fabricated by MeV Al Ion Implantation
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Short-Circuit Reliability Analysis of SG-MOSFETs vs Planar 4H-SiC MOSFETs

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Abstract:

This work investigates the short-circuit (SC) reliability of Split-Gate (SG) versus planar 4H-SiC MOSFETs through TCAD simulations. While SG-MOSFETs effectively reduce gate-drain capacitance and improve switching performance, SG-MOSFETs exhibit enhanced short-circuit failure effects. Structural optimization—such as thicker drift regions, extended gate lengths, and narrowed JFET widths—can improve SC withstand time (SCWT). However, SG-MOSFETs suffer from intensified electric field crowding and enhanced drain-induced barrier lowering (DIBL), leading to greater post-SC leakage and thermal instability. Results suggest SG-MOSFETs require careful field and oxide engineering to ensure reliability under fault conditions.

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Periodical:

Key Engineering Materials (Volume 1057)

Pages:

63-68

DOI:

https://doi.org/10.4028/p-a2X5vs

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Online since:

May 2026

Authors:

Pei Chun Liao*, Kung Yen Lee, Ruei Ci Wu, Yan Yu Wen, Po Yu Cheng, Wei Xiang Wang

Keywords:

Drain-Induced Barrier Lowering (DIBL), Gate Oxide Field Crowding, Short-Circuit Reliability, Silicon Carbide (SiC), Split-Gate MOSFET

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