Paper Titles
Impact of Active Cell Geometry on the Static Performance of 10-kV 4H-SiC JBS (Junction Barrier Schottky) Diodes
p.69
Fowler-Nordheim Current at Negative Gate Bias in SiC MOSFETs
p.75
Body Diode Reliability and Reverse Recovery Characteristics of Short Tapered SJ-MOSFET Fabricated by MeV Al Ion Implantation
p.81
Optical Critical Dimension Metrology for the SiC Trench MOSFET Process
p.89
Body Diode Performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET
p.95
An Improved Analytical Model for SiC P-I-N Diode Reverse Recovery
p.103
Anomalous Reverse Recovery of Body Diode in 4H-SiC Superjunction DMOSFET
p.111
Dynamic Conduction Behavior of SiC-MOSFETs in the Sub-Threshold Regime and the Impact of Deep Oxide Traps to the Channel Depletion
p.119
Influence of Cell Structure and Topology on Coss of 4H-SiC MOSFET
p.125

Body Diode Performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET

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Abstract:

This study investigates static and dynamic behavior of a 3.3 kV semi-Superjunction (SJ) MOSFET, compared with a conventional planar MOSFET. The semi-SJ was designed using a cost-effective trench side-wall implantation and SiO2 refill fabrication method and evaluated through TCAD simulations. The optimized semi-SJ MOSFET designs, reduces RON by 19% and increases BV by 500 V compared with the planar MOSFET, while maintaining a comparable reverse recovery charge (QRR). The proposed semi-SJ design demonstrated the best RON×QRR figure of merit (17.8 mΩ·µC), outperforming the conventional planar MOSFET design (19.7 mΩ·µC).

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Periodical:

Key Engineering Materials (Volume 1057)

Pages:

95-101

DOI:

https://doi.org/10.4028/p-4rcL7P

Citation:

Cite this paper

Online since:

May 2026

Authors:

Kyrylo Melnyk*, Arne Benjamin Renz, Mustafa Akif Yildirim, Nikolaos Iosifidis, Qin Ze Cao, Jose Ortiz-Gonzalez, Vishal A. Shah, James A. Gott, Peter Michael Gammon, Marina Antoniou

Keywords:

Body Diode, Planar MOSFET, Reverse Recovery, Semi-Superjunction, Superjunction (SJ)

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* - Corresponding Author

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