A Simplified Method for Extracting Contact Resistivity Using the Circular Transmission Line Model

Jae Hyung Park; Jeff Joo Hyung Kim; Ashish Kumar; Jacob Zacks; Daniel Flint; Daniel J. Lichtenwalner; Sei Hyung Ryu

doi:10.4028/p-I2v7fz

Paper Titles

Impact of Interfacial SiO₂ Layer Thickness on the Electrical Performance of SiO₂/High-K Stacks on 4H-SiC
p.17

Evolution of the Electrical and Microstructural Properties of Mo/4H-SiC Contact with the Annealing Temperature
p.27

Rapid Thermal Anneal with Conductive Heating for SiC Contact Formation
p.33

The Investigation of Effective Thermal Oxidation to SiC MOSFET Gate Oxide Quality Improvement
p.41

A Simplified Method for Extracting Contact Resistivity Using the Circular Transmission Line Model
p.47

BCl₃ Plasma Treatment for Enhanced Ohmic Contact Performance to p-Type 4H-SiC
p.53

Advantages of Backside Metal Contact Resistance on 4H-SiC Bonded Substrates for Power Devices
p.59

Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing
p.67

Deep Implanted SiC Super-Junction Technology
p.75

HomeMaterials Science ForumMaterials Science Forum Vol. 1158A Simplified Method for Extracting Contact...

A Simplified Method for Extracting Contact Resistivity Using the Circular Transmission Line Model

Abstract:

To ensure maximum device current is supplied through a vertical device having a backside ohmic contact, the specific contact resistivity, ρ_c, must be well characterized as it constitutes a portion of the device resistance. While there are multiple approaches to deduce ρ_c, the transmission line model (TLM) remains a convenient choice because of its simplicity in terms of fabrication, measurement, and analysis. For thick substrates where mesa isolation is impractical, the circular transmission line model (CTLM) is an attractive path. In this study we propose an additional restriction on the CTLM design such that the ρ_c is readily extracted from a simple linear regression just as is the case in a linear TLM. We demonstrate the simplified method by extracting ρ_c of an ohmic contact to the c-face of 4H-SiC substrate.