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Paper Titles
Preface
Isolation Structure for Monolithic Integration of Planar CMOS and 1.7 kV Vertical Power MOSFET on 4H-SiC by High Energy Ion Implantation
p.1
Impact of Silicon Nitride Stress on Defects Generation in 4H-SiC and the Effect of Sacrificial Oxidation on Defects Reduction
p.9
Impact of Interfacial SiO2 Layer Thickness on the Electrical Performance of SiO2/High-K Stacks on 4H-SiC
p.17
Evolution of the Electrical and Microstructural Properties of Mo/4H-SiC Contact with the Annealing Temperature
p.27
Rapid Thermal Anneal with Conductive Heating for SiC Contact Formation
p.33
The Investigation of Effective Thermal Oxidation to SiC MOSFET Gate Oxide Quality Improvement
p.41
A Simplified Method for Extracting Contact Resistivity Using the Circular Transmission Line Model
p.47
BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to p-Type 4H-SiC
p.53

Evolution of the Electrical and Microstructural Properties of Mo/4H-SiC Contact with the Annealing Temperature

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Abstract:

In this work, we investigated the electrical properties evolution of Mo/4H-SiC Schottky contacts following thermal annealing treatments at temperature up to 950 °C. The electrical characterization under forward and reverse bias revealed a reduction of the barrier height from 1.45 eV (as-deposited contact) to 1.30 eV (950°C-annealed contact), with the presence of inhomogeneity in the contact, while the leakage current followed a thermionic-field emission (TFE) model after annealing at 750 °C and presented a significant increase for the 950°C-annealed contact. The electrical characterization was associated with microstructural analyses, which highlighted an enlargement of the grains forming the structure of the Mo-film and the presence of voids near the Mo/4H-SiC interface. These observations can be at the base of the variation in the electrical behavior of the contact.

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Periodical:

Materials Science Forum (Volume 1158)

Pages:

27-32

DOI:

https://doi.org/10.4028/p-S2Zh3j

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Online since:

September 2025

Authors:

Marilena Vivona*, Patrick Fiorenza, Giuseppe Greco, Salvatore Di Franco, Gabriele Bellocchi, Paola Mancuso, Simone Rascunà, Antonio Massimiliano Mio, Giuseppe Nicotra, Filippo Giannazzo, Fabrizio Roccaforte

Keywords:

Electrical Characterization, Microstructural Analyses, Mo/4H-SiC Interface, Schottky Contact

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* - Corresponding Author

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