Rapid Thermal Anneal with Conductive Heating for SiC Contact Formation

Xavier Pages; Simon van der Linde; Jeppe Oterdoom; Mark Steltenpool; Vladimir Kuznetsov; Jaap Beijersbergen; Mickael Sanchez; Sébastien Kerdilès

doi:10.4028/p-7Bd8tb

Paper Titles

Isolation Structure for Monolithic Integration of Planar CMOS and 1.7 kV Vertical Power MOSFET on 4H-SiC by High Energy Ion Implantation
p.1

Impact of Silicon Nitride Stress on Defects Generation in 4H-SiC and the Effect of Sacrificial Oxidation on Defects Reduction
p.9

Impact of Interfacial SiO₂ Layer Thickness on the Electrical Performance of SiO₂/High-K Stacks on 4H-SiC
p.17

Evolution of the Electrical and Microstructural Properties of Mo/4H-SiC Contact with the Annealing Temperature
p.27

Rapid Thermal Anneal with Conductive Heating for SiC Contact Formation
p.33

The Investigation of Effective Thermal Oxidation to SiC MOSFET Gate Oxide Quality Improvement
p.41

A Simplified Method for Extracting Contact Resistivity Using the Circular Transmission Line Model
p.47

BCl₃ Plasma Treatment for Enhanced Ohmic Contact Performance to p-Type 4H-SiC
p.53

Advantages of Backside Metal Contact Resistance on 4H-SiC Bonded Substrates for Power Devices
p.59

HomeMaterials Science ForumMaterials Science Forum Vol. 1158Rapid Thermal Anneal with Conductive Heating for...

Rapid Thermal Anneal with Conductive Heating for SiC Contact Formation

Abstract:

This paper explains the potential of a heat conduction based RTA (Rapid Thermal Anneal) system (Levo) to overcome the main shortcomings of conventional lamp heated tools systems for silicide top contact anneal during SiC MOSFET device fabrication. The advantage of conductive heating is that the radiation-related properties, like transparency of the wafer, does not play a role, and consequently, that the whole rapid thermal anneal becomes independent of wafer type. In this study SiC wafers and Si wafers (both 200mm) were annealed consecutively without any system adjustment. The silicon wafers were used to qualify the process (contamination / within-wafer uniformity and wafer-to-wafer repeatability).

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Periodical:

Materials Science Forum (Volume 1158)

Pages:

33-40

DOI:

https://doi.org/10.4028/p-7Bd8tb

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Online since:

September 2025

Authors:

Xavier Pages*, Simon van der Linde, Jeppe Oterdoom, Mark Steltenpool, Vladimir Kuznetsov, Jaap Beijersbergen, Mickael Sanchez, Sébastien Kerdilès

Keywords:

Conductive Heating, Rapid Thermal Anneal (RTA), Silicide Top Contact

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* - Corresponding Author

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