The Investigation of Effective Thermal Oxidation to SiC MOSFET Gate Oxide Quality Improvement

Young Bin Im; In Kyu Kim; Ji Yeong Yoon; Jin Gu Lee; Gi Hoon Park; Je Sung Lim; June Woo Son; Jung Ho Lee; Y.J. Jang; Chang Beom Jeong

doi:10.4028/p-2Df4qK

Paper Titles

Impact of Silicon Nitride Stress on Defects Generation in 4H-SiC and the Effect of Sacrificial Oxidation on Defects Reduction
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Impact of Interfacial SiO₂ Layer Thickness on the Electrical Performance of SiO₂/High-K Stacks on 4H-SiC
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Evolution of the Electrical and Microstructural Properties of Mo/4H-SiC Contact with the Annealing Temperature
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Rapid Thermal Anneal with Conductive Heating for SiC Contact Formation
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The Investigation of Effective Thermal Oxidation to SiC MOSFET Gate Oxide Quality Improvement
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A Simplified Method for Extracting Contact Resistivity Using the Circular Transmission Line Model
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BCl₃ Plasma Treatment for Enhanced Ohmic Contact Performance to p-Type 4H-SiC
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Advantages of Backside Metal Contact Resistance on 4H-SiC Bonded Substrates for Power Devices
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Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing
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HomeMaterials Science ForumMaterials Science Forum Vol. 1158The Investigation of Effective Thermal Oxidation...

The Investigation of Effective Thermal Oxidation to SiC MOSFET Gate Oxide Quality Improvement

Abstract:

This study investigates the effects of lower pressure and chlorine gas added oxidation on the GOI during the SiC MOSFET GOX process. For structural comparison, analyses were conducted using Dynamic SIMS and TOF-SIMS. Notable differences in the uniformity of silicon concentration within the oxide layer were observed under various GOX conditions. To evaluate the impact of these differences on the characteristics of SiC MOSFETs, Q_BD results were compared. To enhance the reliability of the findings, DOE evaluations of GOX were performed across multiple products. The experimental results indicated that the SiC MOSFET wafers subjected to chlorine oxidation exhibited improved Q_BD performance compared to other conditions.

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Periodical:

Materials Science Forum (Volume 1158)

Pages:

41-46

DOI:

https://doi.org/10.4028/p-2Df4qK

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Online since:

September 2025

Authors:

Young Bin Im*, In Kyu Kim, Ji Yeong Yoon, Jin Gu Lee, Gi Hoon Park, Je Sung Lim, June Woo Son, Jung Ho Lee, Y.J. Jang, Chang Beom Jeong

Keywords:

Chlorine Oxidation, Lower Pressure Oxidation, SiC Gate Oxide, Thermal Oxidation

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Creative Commons CC BY 4.0

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* - Corresponding Author

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