Advantages of Backside Metal Contact Resistance on 4H-SiC Bonded Substrates for Power Devices

Motoki Kobayashi; Hidetsugu Uchida; Naoki Hatta; Seiji Ishikawa; Yuta Higashi; Hiroshi Sezaki; Shinsuke Harada; Kazutoshi Kojima

doi:10.4028/p-Y3u94c

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HomeMaterials Science ForumMaterials Science Forum Vol. 1158Advantages of Backside Metal Contact Resistance on...

Advantages of Backside Metal Contact Resistance on 4H-SiC Bonded Substrates for Power Devices

Abstract:

A unique hybrid structure of the 4H-SiC bonded substrate offers advantages not achievable with conventional 4H-SiC bulk substrates, such as a reduction in on-state resistance and the suppression of forward bias degradation in power devices. This study focuses on the contact resistance between the polycrystalline layer and the backside metal (Ni/Ti) of 4H-SiC bonded substrates, along with its temperature dependence. The results indicate that the bonded substrates exhibit low backside specific contact resistance (SCR) , even without annealing, and this resistance remains stable at elevated temperatures. Furthermore, power devices utilizing bonded substrates demonstrated reduced on-state resistance, as evaluated using Schottky barrier diodes (SBDs). Specifically, 4H-SiC bonded substrates without contact annealing lowered the forward voltage by 13.4% at room temperature (RT) compared to 4H-SiC bulk substrates with contact annealing. These findings suggest that 4H-SiC bonded substrates simplify the backside contact process compared to 4H-SiC bulk substrates, offering significant benefits in reducing on-state resistance in SiC power devices.

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Periodical:

Materials Science Forum (Volume 1158)

Pages:

59-65

DOI:

https://doi.org/10.4028/p-Y3u94c

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Online since:

September 2025

Authors:

Motoki Kobayashi*, Hidetsugu Uchida, Naoki Hatta, Seiji Ishikawa, Yuta Higashi, Hiroshi Sezaki, Shinsuke Harada, Kazutoshi Kojima

Keywords:

Backside Metal Contact Resistance, Bonded Substrate, Circular TLM, Temperature Dependence

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* - Corresponding Author

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