Deep Implanted SiC Super-Junction Technology

Reza Ghandi; Collin Hitchcock; Stacey Kennerly

doi:10.4028/p-qAFI4Q

Paper Titles

Rapid Thermal Anneal with Conductive Heating for SiC Contact Formation
p.33

The Investigation of Effective Thermal Oxidation to SiC MOSFET Gate Oxide Quality Improvement
p.41

A Simplified Method for Extracting Contact Resistivity Using the Circular Transmission Line Model
p.47

BCl₃ Plasma Treatment for Enhanced Ohmic Contact Performance to p-Type 4H-SiC
p.53

Advantages of Backside Metal Contact Resistance on 4H-SiC Bonded Substrates for Power Devices
p.59

Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing
p.67

Deep Implanted SiC Super-Junction Technology
p.75

Improved Angle Tolerance in 4H-SiC Trench Filling Epitaxy Using Chlorinated Chemistry
p.81

Study of SiC Trench Etching Characteristics for Different Crystal Planes
p.87

HomeMaterials Science ForumMaterials Science Forum Vol. 1158Deep Implanted SiC Super-Junction Technology

Deep Implanted SiC Super-Junction Technology

Abstract:

GE Aerospace is developing a novel fabrication method for >3.3 kV devices using ultra-high energy deep implantation and epitaxial overgrowth. We report succesful fabrication of the world’s first 3.5 kV SiC SJ deep implanted junction barrier Schottky (JBS) diodes and 5 kV SiC SJ deep implanted MOSFETs, which exhibit record low specific on-resistance (Ron,sp) and superior breakdown voltages. This innovative method offers a scalable path towards more efficient medium-voltage converters, outperforming traditional SiC unipolar devices.

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