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HomeMaterials Science ForumMaterials Science Forum Vol. 1158Improved Angle Tolerance in 4H-SiC Trench Filling...

Improved Angle Tolerance in 4H-SiC Trench Filling Epitaxy Using Chlorinated Chemistry

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Abstract:

Trench filling epitaxy on 4HSiC using trichlorosilane (HSiCl₃) and hydrogen chloride (HCl) has shown to improve the tolerance to trench angle misalignment relative to the substrate direction in deeper trenches than previously reported. Extraction of growth rates from crosssectional SEM shows that epilayer growth on the mesa corner facet is the most sensitive to trench misalignment, suggesting that HCl may mediate the facet growth rate within ±1.5º from to maintain symmetric growth.

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Periodical:

Materials Science Forum (Volume 1158)

Pages:

81-86

DOI:

https://doi.org/10.4028/p-PnS5D9

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Online since:

September 2025

Authors:

Rydhem Grover, Kelly Turner, Gerard Colston, Arne Benjamin Renz, Marina Antoniou, Peter Michael Gammon, Philip Andrew Mawby, Vishal Ajit Shah*

Keywords:

4H-SiC, Chemical Vapor Deposition, Superjunction, Trench Filling Epitaxy

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