Study of SiC Trench Etching Characteristics for Different Crystal Planes

Akhil Ranjan; Lakshmi Kanta Bera; Shiv Kumar; Hua Mao Lin; Umesh Chand; Navab Singh; Surasit Chung; Abdul Hannan Yeo; Qin Gui Roth Voo; Arvind Sundaram; Li Yuan Liu; Jasmine Woo Yuen Kam

doi:10.4028/p-RDZf7r

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HomeMaterials Science ForumMaterials Science Forum Vol. 1158Study of SiC Trench Etching Characteristics for...

Study of SiC Trench Etching Characteristics for Different Crystal Planes

Abstract:

We have successfully demonstrated comprehensive trench etching of 4H-SiC across various crystal orientations. The results show that both the trench profile and etching depth are unaffected by changes in crystal plane orientation. We achieved our target trench etching depth of 1.9 µm, with vertical sidewall profile angles ranging from 87º to 90º for different crystal planes. Additionally, we performed a qualitative analysis of sidewall roughness for various crystal planes using a 3DAFM scan. It was observed that crystal angles from-60º to-90º exhibited lower surface roughness. We have also explained the mechanisms associated with these surface roughness characteristics.

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Periodical:

Materials Science Forum (Volume 1158)

Pages:

87-91

DOI:

https://doi.org/10.4028/p-RDZf7r

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Online since:

September 2025

Authors:

Akhil Ranjan*, Lakshmi Kanta Bera, Shiv Kumar, Hua Mao Lin, Umesh Chand, Navab Singh, Surasit Chung, Abdul Hannan Yeo, Qin Gui Roth Voo, Arvind Sundaram, Li Yuan Liu, Jasmine Woo Yuen Kam

Keywords:

Crystal Angle, Profile Angle, Sidewall Roughness, Trench Depth, Trench Etching

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* - Corresponding Author

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