BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to p-Type 4H-SiC

Abdul Hannan Yeo; Qin Gui Roth Voo; Lakshmi Kanta Bera; Umesh Chand; Navab Singh; Surasit Chung; Xuan Sang Nguyen; Zhan Jiang Quek; Akhil Ranjan; Vudumula Pavan Kumar Reddy; Sze Jian Garrick Ho; See Kiat Lim; Muhammad Ozalis Omar; Jia Wei Xie; Yee Chia Yeo; Xiao Gong

doi:10.4028/p-92rbzH

Paper Titles

Evolution of the Electrical and Microstructural Properties of Mo/4H-SiC Contact with the Annealing Temperature
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Rapid Thermal Anneal with Conductive Heating for SiC Contact Formation
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The Investigation of Effective Thermal Oxidation to SiC MOSFET Gate Oxide Quality Improvement
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A Simplified Method for Extracting Contact Resistivity Using the Circular Transmission Line Model
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BCl₃ Plasma Treatment for Enhanced Ohmic Contact Performance to p-Type 4H-SiC
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Advantages of Backside Metal Contact Resistance on 4H-SiC Bonded Substrates for Power Devices
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Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing
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Deep Implanted SiC Super-Junction Technology
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Improved Angle Tolerance in 4H-SiC Trench Filling Epitaxy Using Chlorinated Chemistry
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HomeMaterials Science ForumMaterials Science Forum Vol. 1158BCl3 Plasma Treatment for Enhanced Ohmic Contact...

BCl₃ Plasma Treatment for Enhanced Ohmic Contact Performance to p-Type 4H-SiC

Abstract:

Heavily p-type doped (P⁺) implants are commonly used to achieve low specific contact resistance (SCR) for p-body diodes through a costly ion implantation process. Alternatively, our study proposes a single-step plasma treatment method using BCl₃plasma. This method incorporated a high concentration of self-activated p-type boron dopants in the SiC lattice with minimal damage. Experimental I-V data from Schottky Barrier Diodes (SBDs), combined with TCAD simulation, demonstrated that approximately 40 % of boron atoms were activated in the SiC lattice (at a depth of 30-40 nm) without the need for high temperature ion implant activation. Our approach using plasma treatment realizes an SCR value ρ_c of ~ 5.6×10^-5 Ω∙cm², which is approximately 1 order of magnitude lower than that of untreated samples.

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Periodical:

Materials Science Forum (Volume 1158)

Pages:

53-57

DOI:

https://doi.org/10.4028/p-92rbzH

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Online since:

September 2025

Authors:

Abdul Hannan Yeo*, Qin Gui Roth Voo, Lakshmi Kanta Bera, Umesh Chand, Navab Singh, Surasit Chung, Xuan Sang Nguyen, Zhan Jiang Quek, Akhil Ranjan, Vudumula Pavan Kumar Reddy, Sze Jian Garrick Ho, See Kiat Lim, Muhammad Ozalis Omar, Jia Wei Xie, Yee Chia Yeo, Xiao Gong

Keywords:

Boron Plasma Treatment, Ohmic Contact, p-Type SiC

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* - Corresponding Author

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