Preface
Demonstration of ALD SiO2 as Gate Oxide in the 1.7kV SiC UMOSFET for High-Power and Embedded CMOS Circuit Integration
p.1
p.1
Threshold Voltage Control in 4H-SiC MOS Devices by Atomic Layer Deposited Al₂O₃/SiO₂ Interface Dipole Engineering
p.9
p.9
Electrical Performance of 4H-SiC MOSFETs with Different Gate Oxide Processes
p.15
p.15
Impact of ALD Oxidant and Deposition Temperature on Electrical Characteristics of Al2O3/SiO2/SiC MOS-Capacitors
p.21
p.21
Extraction of Trench Sidewall Capacitance by Linear Component Separation towards Wafer Level Evaluation
p.29
p.29
Characterization of Al-Gate MOS Capacitor on Thermally Oxidized 3C/4H Hybrid Polytype-Heterostructure Si-Face SiC(0001) Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE) Method
p.39
p.39
Enhanced Mobility in SiC (0001) MOSFETs Using a Decoupled Plasma Nitridation (DPN) Process and Oxide Deposition
p.47
p.47
Characterizations of 4H-SiC/SiO2 Interface by High-Temperature N2/H2 Pretreatment
p.53
p.53
Preface
Abstract:
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