Paper Titles
Electrical Performance of 4H-SiC MOSFETs with Different Gate Oxide Processes
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Impact of ALD Oxidant and Deposition Temperature on Electrical Characteristics of Al2O3/SiO2/SiC MOS-Capacitors
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Extraction of Trench Sidewall Capacitance by Linear Component Separation towards Wafer Level Evaluation
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Characterization of Al-Gate MOS Capacitor on Thermally Oxidized 3C/4H Hybrid Polytype-Heterostructure Si-Face SiC(0001) Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE) Method
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Enhanced Mobility in SiC (0001) MOSFETs Using a Decoupled Plasma Nitridation (DPN) Process and Oxide Deposition
p.47
Characterizations of 4H-SiC/SiO2 Interface by High-Temperature N2/H2 Pretreatment
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Preliminary Study into Ferroelectric Properties of ALD Al-Doped HfO2/SiO2/ 4H-SiC MOS Capacitors for Improved Short Circuit Reliability
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High-Temperature H2- and N2-Containing Surface Conditioning for SiO2/4H-SiC Interface Optimization
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Electrical Characterization of Mo-Carbide Schottky Contacts on 4H-SiC
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Enhanced Mobility in SiC (0001) MOSFETs Using a Decoupled Plasma Nitridation (DPN) Process and Oxide Deposition

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Abstract:

In this work, we demonstrate a novel oxidation-free gate oxide process consisting of a two-step surface preparation treatment, followed by atomic layer deposition of SiO2 and a post-deposition anneal in nitrogen. The surface treatment includes a 1300°C anneal in hydrogen and dilute silane, followed by decoupled plasma nitridation (DPN). Long channel MOSFETs fabricated with this process show a 1.5X improvement in peak field effect mobility compared with devices utilizing a standard thermal oxide and NO anneal. The MOSFETs had a positive threshold voltage, low gate leakage, and a breakdown field of nearly 10 MV/cm.

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Periodical:

Materials Science Forum (Volume 1192)

Pages:

47-52

DOI:

https://doi.org/10.4028/p-8XxBpT

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Cite this paper

Online since:

May 2026

Authors:

Koushik Ramadoss*, Joshua Holt, Lucien Date, Safdar Muhammad, Jesse Kalliomaki, Fernanda Albrechtvechietti, William Charles, Athena Pang, Shubhendra Jain, Benjamin Briggs, Ludovico Megalini, Michael Chudzik, Dallas Morisette, James A. Cooper

Keywords:

Atomic Layer Deposition (ALD), Decoupled Plasma Nitridation, H2 Etching, MOSFET

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