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Preliminary Study into Ferroelectric Properties of ALD Al-Doped HfO2/SiO2/ 4H-SiC MOS Capacitors for Improved Short Circuit Reliability

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Abstract:

We investigate the physical and electrical characteristics of the Al-doped or undoped HfO2/SiO2 gate stacks on 4H-SiC by testing MOSCAP chips fabricated in house. A clear reduction in accumulation capacitance (Cox) with increasing chuck temperature from room temperature up to 523 K is observed, with Al-doping playing a key role and aligning with temperature-dependent Landau ferroelectric theory. Chips annealed at 1100°C in N₂ ambient show the highest Cox decrease rates while maintaining functional MOS interfaces with acceptable flatband voltage, hysteresis, and Dit profiles. TCAD simulations on a double trench MOSFET model, based on the extracted data indicate improved electro-thermal performance, demonstrating that Al-doped HfO₂/SiO₂ gate stacks are a promising approach for enhancing 4H-SiC power devices.

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Periodical:

Materials Science Forum (Volume 1192)

Pages:

59-65

DOI:

https://doi.org/10.4028/p-UxdeG4

Citation:

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Online since:

May 2026

Authors:

Xinkai Tian*, Arne Benjamin Renz, Kyrylo Melnyk, Mustafa Akif Yildirm, Marco Boccarossa, Luca Maresca, A. Irace, James A. Gott, Nereus S. Agbo, Paul Taylor, Marina Antoniou, Philip Andrew Mawby, Peter M. Gammon

Keywords:

Accumulation Capacitance, Al-Doped HfO2, Crystallisation, Dit Profile, Ferroelectricity, High-k Dielectrics, Paraelectricity, Short-Circuit Ruggedness, Temperature-Dependence

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