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Electrical Characterization of Mo-Carbide Schottky Contacts on 4H-SiC

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Abstract:

In this work, the electrical properties of Mo2C/4H-SiC Schottky contacts were studied at different annealing temperatures. In particular, the Schottky barrier height was derived by current-voltage measurements on as-deposited and 400 °C and 700 °C-annealed contacts. The Schottky barrier height was comparable for the as-deposited and 400°C-annealed Mo2C/4H-SiC contact (0.94 and 0.96 eV, respectively), while it increased (1.07 eV) for the 700 °C-annealed Mo2C/4H-SiC one. For the sample annealed at 700°C, the electrical characterization of the diodes was combined with the study of the surface and interface electrical properties, by Kelvin-probe force microscopy (KPFM) and frequency dependent capacitance-voltage measurements (C-f-V) and discussed assuming a Mo/4H-SiC Schottky contact (FB =1.39 eV) as a reference. The KPFM measurements revealed a similar value of the surface potential, thus suggesting that the work function of the metal is the same in both cases. On the other hand, a higher density of interface state was obtained by C-f-V for the Mo2C/4H-SiC system. This latter can explain the reduction of the Schottky barrier height observed for this system.

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Periodical:

Materials Science Forum (Volume 1192)

Pages:

75-80

DOI:

https://doi.org/10.4028/p-0waUsG

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Online since:

May 2026

Authors:

Marilena Vivona*, Salvatore Ethan Panasci, Marco Zignale, Valerio Votadoro, Salvatore di Franco, Emanuela Schilirò, Giuseppe Greco, Raffaella Lo Nigro, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

Keywords:

Electrical Characterization, Mo2C/ 4H-SiC Interface, Schottky Contact

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* - Corresponding Author

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