p.39
p.47
p.53
p.59
p.67
p.75
p.81
p.89
p.97
Analysis of Backside Metal Contact Resistance on Low-Resistivity Polycrystalline in 4H-SiC-Bonded Substrates
Abstract:
In this study, 4H-SiC bonded substrates (bonded-SiC) with an average resistivity of 2.4–31.5 mΩ·cm were prepared, and attention has been directed toward the relationship between the resistivity of bonded-SiC and the contact resistance at the backside where metal Ti/Ni was applied. A circular transmission line model (cTLM) was used to accurately measure the backside contact resistance. A linear correlation was found between and the resistivity of bonded-SiCs at room temperature (RT). This result indicates the existence of a threshold resistivity at which the specific contact resistance in the range of 2.2 × 10−6 to 1.5 × 10−5 Ω·cm2 can be achieved without contact annealing; it also indicates that the temperature dependence of between 17.4 and 34.4 mΩ·cm is eliminated. This phenomenon can occur because is dominated by tunneling current above the nitrogen concentration at the threshold resistivity, which is driven by the high nitrogen concentration and sufficient carrier activation in the polycrystalline portion (polycrystalline layer) of bonded-SiCs. These are important properties resulting from a polycrystalline layer with a 3C structure in bonded-SiC.
Info:
Periodical:
Pages:
97-103
DOI:
Citation:
Online since:
May 2026
Permissions:
Share:
Citation: