Paper Titles

Radical Kinetics in Processing Plasmas: Optical Diagnostics of Gas Phase and Surface Reactions
p.219

Negatively Charged Particles in Fluorocarbon RF Etch Plasmas: Density Measurements Using Microwave Resonance and the Photodetachment Effect
p.235

Biased Electron Cyclotron Resonance Chemical-Vapor Deposition of Silicon Dioxide Inter-Metal Dielectric Thin Films
p.255

TEOS-Based Oxides: Deposition Dependent Properties
p.269

Plasma Enhanced Chemical Vapor Deposited Silicon and Silicon Dioxide Films for Indium Phosphide MISFET Technology
p.285

Physical and Electrical Properties of Silicon Nitride and Oxynitride Films Prepared by Plasma Enhanced CVD
p.301

Preparation and Properties of PECVD Silicon Nitride Films from SiH₄ + NH₃ and/or NF₃ and SiF₄+ NH₃ Gas Mixtures
p.319

Bonding Configuration and Defects in Glow-Discharge Amorphous SiN_x:H Films Deposited at 300°C and 500°C
p.335

Doped Glasses for ULSI-Technology: Integration of Molecular Engineering and Plasma-CVD
p.359

HomeMaterials Science ForumMaterials Science Forum Vols. 140-142Plasma Enhanced Chemical Vapor Deposited Silicon...

Plasma Enhanced Chemical Vapor Deposited Silicon and Silicon Dioxide Films for Indium Phosphide MISFET Technology

Article Preview

Abstract:

You might also be interested in these eBooks

Plasma Properties, Deposition and Etching

Info:

Periodical:

Materials Science Forum (Volumes 140-142)

Pages:

285-300

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.140-142.285

Citation:

Cite this paper

Online since:

October 1993

Authors:

M. Shokrani, V.J. Kapoor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: