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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263

Materials Science Forum Vols. 258-263

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263

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Table of Contents

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Paper Title Page

Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys

Authors: Atsuo Kawasuso, Sohei Okada, Ichiro Yonenaga, T. Honda, Masashi Suezawa

127

Electronic Properties of Defects Introduced in n- and p-Type Si_1-xGe_x During Ion Etching

Authors: S.A. Goodman, F. Danie Auret, M. Mamor, Prakash N.K. Deenapanray, W.E. Meyer

133

The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy

Authors: I.A. Buyanova, W.M. Chen, G.R. Pozina, Bo Monemar, W.X. Ni, G.V. Hansson

139

Gold-Related Levels in Relaxed Si_1-xGe_x Alloy Layers: A Study of the Pinning Effect

Authors: A. Mesli, P. Kringhøj, Arne Nylandsted Larsen

145

Dislocation-Related Electronic States in Strain-Relaxed Si_1-xGe_x/Si Epitaxial Layers Grown at Low Temperature

Authors: Patricia M. Mooney, Kai Shum

151

Dislocation Activities in Bulk GeSi Crystals

Authors: Ichiro Yonenaga, Koji Sumino

159

Schottky Diodes on Si_1-x-yGe_xC_y Alloys: Measurement of Band Off-Set by DLTS

Authors: M. Serpentini, G. Brémond

165

Molecular-Dynamics Simulations of Microscopic Defects in Silicon

Authors: Stefan K. Estreicher, Peter A. Fedders

171

Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon

Authors: R.L. Lichti, K.H. Chow, S.F.J. Cox, T.L. Estle, B. Hitti, C. Schwab

179

Hydrogenation and Passivation of B in Si by Boiling in Water Pressurized up to 10 ATM

Authors: Y. Ohmura, M. Libezny, M. Ohtaka, A. Kimoto, M. Yamaura

185

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