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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263

Materials Science Forum Vols. 258-263

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263

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Paper Title Page

Localization of Nondegenerate Electrons at Random Potential of Charged Impurities

Authors: M.S. Kagan, E.G. Landsberg, Natalia Zhdanova

65

Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge

Authors: I.V. Altukhov, E.G. Chirkova, M.S. Kagan, K.A. Korolev, V.P. Sinis, K. Schmalz, M.A. Odnoblyudov, I.N. Yassievich

71

Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As

Authors: K.M. Itoh, Takahiro Kinoshita, W. Walukiewicz, J.W. Beeman, Eugene E. Haller, J. Muto, J.W. Farmer, V.I. Ozhogin

77

Defects in SiGe

Authors: Arne Nylandsted-Larsen

83

Acceptor States in Boron Doped SiGe Quantum Wells

Authors: K. Schmalz, M.S. Kagan, I.V. Altukhov, K.A. Korolev, Dmitry Orlov, V.P. Sinis, S.G. Tomas, K.L. Wang, I.N. Yassievich

91

Substitutional Carbon in Ge and Si_1-xGe_x.

Authors: L. Hoffmann, J.C. Bach, J. Lundsgaard Hansen, Arne Nylandsted Larsen, Brian Bech Nielsen, P. Leary, R. Jones, Sven Öberg

97

Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge

Authors: D. Wauters, Paul Clauws

103

Optical Investigation of Ge-Rich Ge_1-xSi_x (0≤ x ≤ 0.1) Alloys

Authors: M. Franz, Klaus Pressel, K.F. Dombrowski, H. Rücker, A. Barz, P. Dold, K.W. Benz

109

Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si_1-xGe_x

Authors: M. Mamor, F. Danie Auret, S.A. Goodman, G. Myburg, Prakash N.K. Deenapanray, W.E. Meyer

115

Lattice Defects in Si_1-xGe_x Epitaxial Diodes Induced by 20-MeV Alpha Rays

Authors: H. Ohyama, Jan Vanhellemont, Eddy Simoen, Cor Claeys, Y. Takami, K. Hayama, H. Sunaga, Jef Poortmans, Matty Caymax

121

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