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Materials Science Forum Vols. 258-263

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263

ToC:

Table of Contents

Paper Title Page

Effects of Hydrogen Plasma on Dislocation Motion in Silicon
Authors: Y. Yamashita, F. Jyobe, Y. Kamiura, Koji Maeda
313
Hydrogenation of Copper Related Deep States in n-Type Si Containing Extended Defects
Authors: J. Kaniewski, M. Kaniewska, L. Ornoch, Takashi Sekiguchi, Koji Sumino
319
Hydrogenation of Deep Defect States in n-Type Si Containing Extended Defects and Transition Metal (Ni or Fe)
Authors: M. Kaniewska, J. Kaniewski, L. Ornoch, Takashi Sekiguchi, Koji Sumino
325
Metastable Defects and Recombination in Hydrogenated Amorphous Silicon
Authors: E. Morgado, R.T. Henriques
331
Tracing Diffusion by Laplace Deep-Level Spectroscopy
Authors: K. Bonde Nielsen, L. Dobaczewski
337
Defects in AS-Grown Silicon and their Evolution During Heat Treatments
Authors: Jan Vanhellemont, E. Dornberger, J. Esfandyari, G. Kissinger, M.-A. Trauwaert, H. Bender, D. Gräf, U. Lambert, Wilfried von Ammon
341
An Investigation of the Possibility that Oxygen Diffusion in Czochralski Silicon is Catalyzed during Clustering
Authors: S.A. McQuaid, B.K. Johnson, Robert J. Falster, K.F. Kelton
347
Temperature-Dependent Widths of Infrared and Far-Infrared Absorption Lines of Oxygen in Silicon
Authors: Hiroshi Yamada-Kaneta
355
The Oxygen Dimer in Silicon: Some Experimental Observations
Authors: T. Hallberg, J. Lennart Lindström, L.I. Murin, V.P. Markevich
361
Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C
Authors: J. Lennart Lindström, T. Hallberg, P. Liberski, Bengt Gunnar Svensson, L.I. Murin, V.P. Markevich
367

Showing 51 to 60 of 302 Paper Titles

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