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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Chemical Environment of Atomic Vacancies in...

Chemical Environment of Atomic Vacancies in Electron Irradiated Silicon Carbide Measured by a 2D-Doppler Broadening Technique

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

485-488

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.485

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Online since:

April 2002

Authors:

Al. Rempel, K. Blaurock, K.J. Reichle, W. Sprengel, Hans Eckhardt Schaefer

Keywords:

6H-SiC, Chemical Environment of a Defect, Coincident Doppler Broadening, Electron Irradiation, Electron Momentum Distribution, Positron Lifetime, Silicon Carbide (SiC), Single Vacancies

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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