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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436

Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

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Table of Contents

Paper Title Page

High-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single Crystals

Authors: Christoph Seitz, Al. Rempel, Andreas Magerl, M. Gomm, W. Sprengel, Hans Eckhardt Schaefer

289

Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

Authors: N.S. Savkina, Anatoly M. Strel'chuk, L.M. Sorokin, G.N. Mosina, Alla S. Tregubova, V.V. Solov'ev, Alexander A. Lebedev

293

Dynamics of 4H-SiC Plasticity

Authors: S.Yu. Karpov, A.V. Kulik, M.S. Ramm, Yuri Makarov

297

Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC

Authors: Björn Magnusson, Peder Bergman, Erik Janzén

301

Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy

Authors: John W. Steeds, G.A. Evans, S.A. Furkert, Lothar Ley, Martin Hundhausen, Norbert Schulze, Gerhard Pensl

305

Photoluminescence Up-Conversion Processes in SiC

Authors: Matthias Wagner, Ivan G. Ivanov, L. Storasta, Peder Bergman, Björn Magnusson, W.M. Chen, Erik Janzén

309

New Photoluminescence Features in 4H-SiC Induced by Hydrogenation

Authors: Yaroslav Koshka, Michael S. Mazzola, Jeffery L. Wyatt

313

Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy

Authors: Simona Binetti, Alessia Le Donne, Maurizio Acciarri, M. Cerminara, Sergio Pizzini

317

Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum

Authors: Ivan G. Ivanov, Alexsandre Ellison, Erik Janzén

321

Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC

Authors: Roland Püsche, Martin Hundhausen, Lothar Ley

325