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Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

ToC:

Table of Contents

Paper Title Page

Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System
Authors: C. Sartel, Jean Marie Bluet, Véronique Soulière, I. El Harrouni, Yves Monteil, Michel Mermoux, Gérard Guillot
165
Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers
Authors: Mikael Syväjärvi, Rositza Yakimova, R.R Ciechonski, Alexander A. Lebedev, D.V. Davydov, Erik Janzén
169
Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation
Authors: S. Dannefaer, V. Avalos, Mikael Syväjärvi, Rositza Yakimova
173
Computational Modeling for the Development of CVD SiC Epitaxial Growth Processes
Authors: Galyna Melnychuck, Yaroslav Koshka, S. Yingquan, Michael S. Mazzola, C.U. Pittman
177
Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC?
Authors: Christophe Jacquier, François Cauwet, Jean Claude Viala, Yves Monteil
181
Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD
Authors: Hiroaki Saitoh, Tsunenobu Kimoto, Hiroyuki Matsunami
185
Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers
Authors: N.S. Savkina, V.B. Shuman, V.V. Ratnikov, Alexander A. Lebedev, A.Yu. Rogachev
189
The Effect of Thermal Gradients on SiC Wafers
Authors: Christer Hallin, Torbjörn Joelsson, Erik Janzén
193
Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes
Authors: Tsunenobu Kimoto, Katsunori Danno, Keiko Fujihira, Hiromu Shiomi, Hiroyuki Matsunami
197
Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method
Authors: Pierre Ferret, A. Leray, G. Feuillet, P. Lyan, C. Pudda, Thierry Billon
201

Showing 41 to 50 of 243 Paper Titles

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