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Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

ToC:

Table of Contents

Paper Title Page

Comparison between Ar and N2 for High-Temperature Treatment of 4H-SiC Substrates
Authors: Ghassan Younes, Gabriel Ferro, Christophe Jacquier, Jacques Dazord, Yves Monteil
119
SiC Epitaxy on Non-Standard Surfaces
Authors: Hiroyuki Matsunami, Tsunenobu Kimoto
125
4H-SiC Epitaxial Growth for High-Power Devices
Authors: Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Toshiyuki Miyanagi, Kunikaza Izumi
131
Predictions of Nitrogen Doping in SiC Epitaxial Layers
Authors: Örjan Danielsson, Urban Forsberg, Erik Janzén
137
Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC
Authors: Jérôme Mezière, Michel Pons, Jean Marc Dedulle, Elisabeth Blanquet, Pierre Ferret, Lea Di Cioccio, Thierry Billon
141
Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors
Authors: Rong Jun Wang, I. Bhat, T. Paul Chow
145
Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition
Authors: Shun-ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami
149
Nitrogen Delta Doping in 4H-SiC Epilayers
Authors: Anne Henry, L. Storasta, Erik Janzén
153
Temperature Effects in SiC Epitaxial Growth
Authors: James D. Oliver
157
Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD
Authors: Keiko Fujihira, Tsunenobu Kimoto, Hiroyuki Matsunami
161

Showing 31 to 40 of 243 Paper Titles

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