Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

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Table of Contents

Paper Title Page

Growth of p-Type SiC Layer by Sublimation Epitaxy

Authors: S. Ohta, Tomoaki Furusho, H. Takagi, Satoru Ohshima, Shigehiro Nishino

205

Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate

Authors: Yoichi Okui, Chacko Jacob, Satoru Ohshima, Shigehiro Nishino

209

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy

Authors: Philip G. Neudeck, J. Anthony Powell, David J. Spry, Andrew J. Trunek, X. Huang, William M. Vetter, Michael Dudley, Marek Skowronski, Jin Qiang Liu

213

Growth of SiC Hetero-Epitaxial Films by Pulsed-Laser Deposition -Laser Frequency Dependence-

Authors: Takeshi Kusumori, Hachizo Muto

217

Thin Film SiC Epitaxy on Si(111) from Acetylene Precursor

Authors: V. De Renzi, R. Biagi, U. Del Pennino

221

Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization

Authors: Hachizo Muto, Takashi Asano, Takeshi Kusumori

225

Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates

Authors: Hideki Shimizu, Kensaku Hisada

229

High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates

Authors: Petia Weih, Volker Cimalla, Christian Förster, Joerg Pezoldt, Thomas Stauden, Lothar Spieß, Henry Romanus, M. Eickhoff, M. Hermann, Pierre M. Masri, Oliver Ambacher

233

SiC Synthesis by Fullerene Free Jets on Si(111) at Low Temperatures

Authors: L. Aversa, R. Verucchi, M. Pedio, Salvatore Iannotta

237

Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC Wafers

Authors: K. Murata, Naoki Fujioka, Y. Chinone, Shigehiro Nishino

241