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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436

Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

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Table of Contents

Paper Title Page

Infrared Optical Properties of 3C, 4H and 6H Silicon Carbide

Authors: O.P. Alexander Lindquist, H. Arwin, Anne Henry, K. Järrendahl

329

Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC

Authors: Roland Weingärtner, Matthias Bickermann, Z.G. Herro, Ulrike Künecke, Sakwe Aloysius Sakwe, Peter J. Wellmann, Albrecht Winnacker

333

Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals

Authors: Matthias Bickermann, Roland Weingärtner, Z.G. Herro, Dieter Hofmann, Ulrike Künecke, Peter J. Wellmann, Albrecht Winnacker

337

Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC

Authors: Roland Weingärtner, Albrecht Winnacker, Peter J. Wellmann

341

D_ll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC

Authors: F.H.C. Carlsson, S.G. Sridhara, Anders Hallén, Peder Bergman, Erik Janzén

345

Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping

Authors: L. Masarotto, Jean Marie Bluet, I. El Harrouni, Gérard Guillot

349

Raman Imaging Analysis of SiC Wafers

Authors: Michel Mermoux, Alexandre Crisci, Francis Baillet

353

Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers

Authors: M. Mier, John Boeckl, Matthew D. Roth, Cengiz M. Balkas, M. Nelson

357

Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique

Authors: Xian Yun Ma, Mathew Parker, Yuefei Ma, T. Kubota, Tangali S. Sudarshan

361

Electrical and Optical Characterization of SiC

Authors: Gerhard Pensl, Frank Schmid, Florin Ciobanu, Michael Laube, Sergey A. Reshanov, Norbert Schulze, Kurt Semmelroth, Adolf Schöner, Günter Wagner, Hiroyuki Nagasawa

365