Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

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Paper Title Page

Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films

Authors: Hoa Thi Mai Pham, Tolgay Akkaya, Charles R. de Boer, Pasqualina M. Sarro

451

Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes

Authors: Luciano Scaltrito, Samuele Porro, Fabrizio Giorgis, P. Mandracci, M. Cocuzza, C. Fabrizio Pirri, Carlo Ricciardi, Sergio Ferrero, G. Richieri, C. Sgorlon, Luigi Merlin, Anna Cavallini, Antonio Castaldini

455

Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers

Authors: Sergey A. Reshanov, O. Klettke, Gerhard Pensl, Wolfgang J. Choyke

459

Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters

Authors: Ioana Pintilie, L. Pintilie, K. Irmscher, Bernd Thomas

463

Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

Authors: Evgenia V. Kalinina, G. Kholuyanov, G. Onushkin, D.V. Davydov, Anatoly M. Strel'chuk, A.S. Zubrilov, Anders Hallén, Andrey O. Konstantinov, V.A. Skuratov, J. Staňo

467

Identification and Annealing of Common Intrinsic Defect Centers

Authors: M. Bockstedte, Matthias Heid, Alexander Mattausch, Oleg Pankratov

471

Polytype-Dependent Vacancy Annealing Studied by Positron Annihilation

Authors: Atsuo Kawasuso, Masahito Yoshikawa, Masaki Maekawa, Hisayoshi Itoh, Toshinobu Chiba, F. Redmann, Reinhard Krause-Rehberg, Michael Weidner, Thomas Frank, Gerhard Pensl

477

Nitrogen-Vacancy Complexes in SiC – Final Annealing Products of the Silicon Vacancy?

Authors: Uwe Gerstmann, E. Rauls, Thomas Frauenheim, Harald Overhof

481

A Deep Erbium-Related Bandgap State in 4H Silicon Carbide

Authors: G. Pasold, F. Albrecht, Joachim Grillenberger, Ulrike Grossner, C. Hülsen, R. Sielemann, W. Witthuhn

487

Theoretical Study of Antisite Aggregation in α-SiC

Authors: E. Rauls, Adam Gali, Peter Deák, Thomas Frauenheim

491