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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436

Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

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Paper Title Page

EPR Studies of Interface Defects in n-Type 6H-SiC/SiO₂ Using Porous SiC

Authors: Hans Jürgen von Bardeleben, J.L. Cantin, Marina G. Mynbaeva, Stephen E. Saddow

495

Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiC

Authors: Ekaterina N. Kalabukhova, W.C. Mitchel, S.N. Lukin

499

Phosphorus-Related Shallow and Deep Defects in 6H-SiC

Authors: P.G. Baranov, Ivan V. Ilyin, E.N. Mokhov, Hans Jürgen von Bardeleben, J.L. Cantin

503

EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V

Authors: Hans Jürgen von Bardeleben, J.L. Cantin, Sergey A. Reshanov, V.P. Rastegaev

507

Calculation of Hyperfine Constants of Defects in 4H-SiC

Authors: Adam Gali, Peter Deák, Nguyen Tien Son, Erik Janzén, Hans Jürgen von Bardeleben, Jean-Louis Monge

511

A Simple Model of 3d Impurities in Cubic Silicon Carbide

Authors: I.I. Parfenova, E.I. Yuryeva, Sergey A. Reshanov, V.P. Rastegaev, A.L. Ivanovskii

515

Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide

Authors: Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, Patrick R. Briddon

519

A Shallow Acceptor Complex in 4H-SiC: Al_SiN_CAl_Si

Authors: Peter Deák, B. Aradi, Adam Gali, Uwe Gerstmann, Wolfgang J. Choyke

523

Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond

Authors: Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, Patrick R. Briddon

527

Electronic Properties of Stacking Faults in 15R-SiC

Authors: Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, Patrick R. Briddon

531