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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436

Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

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Table of Contents

Paper Title Page

Parameters of Electron-Hole Scattering in Silicon Carbide

Authors: Michael E. Levinshtein, Pavel A. Ivanov, A.G. Tandoev, S.N. Yurkov, John W. Palmour, Ranbir Singh

411

Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy

Authors: P. Lévêque, D.M. Martin, Bengt Gunnar Svensson, Anders Hallén

415

Electrical Characterization of Ni/Porous SiC/n-SiC Structure

Authors: A.E. Grekov, Stanislav I. Soloviev, Taniya Das, Tangali S. Sudarshan

419

Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC

Authors: L. Storasta, Björn Magnusson, Anne Henry, Margareta K. Linnarsson, Peder Bergman, Erik Janzén

423

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

Authors: Alexander A. Lebedev, Anatoly M. Strel'chuk, N.S. Savkina, Elena V. Bogdanova, Alla S. Tregubova, Alexey N. Kuznetsov, D.V. Davydov

427

Mapping on Bulk and Epitaxy Layer 4H-SiC

Authors: Rudi Ono, Tsutomu Yatsuo, Hideyo Okushi, Kazuo Arai

431

Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates

Authors: Rudi Ono, Makato Fujimaki, Hoon Joo Na, Satoshi Tanimoto, Takashi Shinohe, Tsutomu Yatsuo, Hideyo Okushi, Kazuo Arai

435

Electron-Induced Damage Effects in 4H-SiC Schottky Diodes

Authors: Antonio Castaldini, Anna Cavallini, Filippo Nava, P.G. Fuochi, P. Vanni

439

Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation

Authors: Tetsuo Hatakeyama, Takatoshi Watanabe, Mitsuhiro Kushibe, Kazutoshi Kojima, Seiji Imai, Takaya Suzuki, Takashi Shinohe, Tomoyuki Tanaka, Kazuo Arai

443

Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC

Authors: Hideharu Matsuura, K. Sugiyama, Kimito Nishikawa, T. Nagata, N. Fukunaga

447