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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436

Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

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Table of Contents

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Paper Title Page

Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC

Authors: Marie-Laure David, Giovanni Alfieri, Edouard V. Monakhov, Anders Hallén, Jean François Barbot, Bengt Gunnar Svensson

371

Activation Study of Implanted N⁺ in 6H-SiC by Scanning Capacitance Microscopy

Authors: Vito Raineri, Lucia Calcagno, Filippo Giannazzo, D. Goghero, F. Musumeci, Fabrizio Roccaforte, Francesco La Via

375

Majority Traps Observed in H⁺- or He⁺-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy

Authors: Sergey A. Reshanov, O. Klettke, Gerhard Pensl

379

On the Unusual Nature of a DLTS-Detected Defect in Bulk n-Type 6H-SiC

Authors: E. van Wyk, A.W.R. Leitch

383

High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers

Authors: Adolf Schöner, Keiko Fujihira, Tsunenobu Kimoto, Hiroyuki Matsunami

387

Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes

Authors: Enn Velmre, Andres Udal

391

Improved p-Type Conductivity in Heavily Al-Doped SiC by Ion-Beam-Induced Nano-Crystallization

Authors: V. Heera, K.N. Madhusoodanan, A. Mücklich, D. Panknin, Wolfgang Skorupa

395

Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping

Authors: P. Terziyska, Julien Pernot, Sylvie Contreras, Jean-Louis Robert, Lea Di Cioccio, Thierry Billon

399

From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks

Authors: Julien Pernot, Jean Camassel, Hervé Peyre, Jean-Louis Robert

403

Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H-SiC: Experiment and Simulation

Authors: V. Bikbajevas, Vytautas Grivickas, M. Stölzer, Enn Velmre, Andres Udal, Paulius Grivickas, Mikael Syväjärvi, Rositza Yakimova

407

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