Volumes

Materials Science Forum
Vols. 445-446

Materials Science Forum
Vols. 443-444

Materials Science Forum
Vol. 442

Materials Science Forum
Vols. 440-441

Materials Science Forum
Vol. 439

Materials Science Forum
Vols. 437-438

Materials Science Forum
Vols. 433-436

Materials Science Forum
Vols. 426-432

Materials Science Forum
Vols. 423-425

Materials Science Forum
Vols. 419-422

Materials Science Forum
Vols. 416-418

Materials Science Forum
Vols. 414-415

Materials Science Forum
Vol. 413

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436

Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

Export:

ToC:

Table of Contents

<<
<
…
5
6
7
8
9
…
>
>>

Paper Title Page

Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices

Authors: Michael Dudley, X. Huang, William M. Vetter, Philip G. Neudeck

247

Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing

Authors: Hun Jae Chung, Jin Qiang Liu, Anne Henry, Marek Skowronski

253

Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering

Authors: J. Serrano, J. Strempfer, M. Cardona, M. Schwoerer-Böhning, H. Requardt, M. Lorenzen, B. Stojetz, P. Pavone, Wolfgang J. Choyke

257

Conditions for Micropipe Dissociation by 4H-SiC CVD Growth

Authors: Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Toshiyuki Miyanagi, Kunikaza Izumi

261

Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging

Authors: Etienne Pernot, I. El Harrouni, Michel Mermoux, Jean Marie Bluet, Mikhail Anikin, Didier Chaussende, Michel Pons, Roland Madar

265

Doping-Related Strain in n-Doped 4H-SiC Crystals

Authors: Henrik Jacobsson, Jens Birch, Ulf Lindefelt, Christer Hallin, Anne Henry, Rositza Yakimova, Erik Janzén

269

Stacking Faults in 3C-SiC Relax Lattice Deformation

Authors: Naoki Hatta, Kuniaki Yagi, Takamitsu Kawahara, Hiroyuki Nagasawa

273

Characteristics of Planar Defects in Shallow Trenches Related to the Presence of Micropipes

Authors: N. Vouroutzis, Mikael Syväjärvi, J. Stoemenos, Rositza Yakimova

277

Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers

Authors: Rositza Yakimova, Mikael Syväjärvi, T. Iakimov, A.O. Okunev, V.E. Udal'tsov, Erik Janzén

281

Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC

Authors: Francisco M. Morales, S.I. Molina, Daniel Araujo, Volker Cimalla, Joerg Pezoldt

285

<<
<
…
5
6
7
8
9
…
>
>>