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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436

Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

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Paper Title Page

A Cause for SiC/SiO₂ Interface States: the Site Selection of Oxygen in SiC

Authors: Peter Deák, Adam Gali, Z. Hajnal, Thomas Frauenheim, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke, P. Ordejón

535

Angle-Resolved Studies of SiO₂/SiC Samples

Authors: Leif I. Johansson, Charíya Virojanadara, Th. Eickhoff, W. Drube

539

Positron Annihilation Studies of Defects at the SiO₂/SiC Interface

Authors: James Dekker, Kimmo Saarinen, H.Ö. Ólafsson, E.Ö. Sveinbjörnsson

543

A Study of the Shallow Electron Traps at the 4H-SiC/SiO₂ Interface

Authors: H.Ö. Ólafsson, E.Ö. Sveinbjörnsson, T.E. Rudenko, V.I. Kilchytska, I.P. Tyagulski, I.N. Osiyuk

547

Traps at the Interface of 3C-SiC/SiO₂-MOS-Structures

Authors: Florin Ciobanu, Gerhard Pensl, Hiroyuki Nagasawa, Adolf Schöner, Sima Dimitrijev, K.Y. Cheong, Valeri V. Afanas'ev, Günter Wagner

551

Study of the Wet Re-Oxidation Annealing of SiO₂/4H-SiC (0001) Interface Properties by AR-XPS Measurements

Authors: A. Ekoué, O. Renault, Thierry Billon, Lea Di Cioccio, Gérard Guillot

555

Structural Defects at SiO₂/SiC Interfaces Detected by Positron Annihilation

Authors: Masaki Maekawa, Atsuo Kawasuso, Masahito Yoshikawa, Hisayoshi Itoh

559

Reduction of Interface Trapped Density of SiO₂/4H-SiC by Oxidation of Atomic Oxygen

Authors: Ryouji Kosugi, Kenji Fukuda, Kazuo Arai

563

High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H₂ Post-Oxidation Annealing

Authors: Kenji Fukuda, Junji Senzaki, Kazutoshi Kojima, Takaya Suzuki

567

Cubic SiC Surface Structure Studied by X-Ray Diffraction

Authors: M. D'Angelo, H. Enriquez, V.Yu. Aristov, P. Soukiassian, G. Renaud, A. Barbier, S. Chiang, F. Semond, Lea Di Cioccio, Thierry Billon

571