Materials Science Forum Vols. 433-436

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https://doi.org/10.4028/www.scientific.net/MSF.433-436

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Paper Title Page

Porous SiC: New Applications through In- and Out- Dopant Diffusion

Authors: Marina G. Mynbaeva, N.I. Kuznetsov, A. Lavrent'ev, K. Mynbaev, J.T. Wolan, B. Grayson, V. Ivantsov, Alexander Syrkin, A. Fomin, Stephen E. Saddow

657

Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs

Authors: Geun Ho Song, Wook Bahng, Nam Kyun Kim, Sang Cheol Kim, K.S. Seo, Eun Dong Kim

661

Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions

Authors: Masashi Kato, Masaya Ichimura, Eisuke Arai, P. Ramasamy

665

Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs

Authors: Norihiko Kiritani, Masakatsu Hoshi, Satoshi Tanimoto, Kazuhiro Adachi, Shin Ichi Nishizawa, Tsutomu Yatsuo, Hideyo Okushi, Kazuo Arai

669

Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data

Authors: Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, G.C. Cardinali, Roberta Nipoti

673

Low-Frequency Noise Measurements as a Quality Indicator for Ohmic Contacts to n-GaN

Authors: Nobuhisa Tanuma, Hirokazu Tanizaki, Saburo Yokokura, T. Matsui, Sumihisa Hashiguchi, Josef Sikula, Munecazu Tacano

677

Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC

Authors: M.E. Samiji, A.M. Venter, A.W.R. Leitch

681

Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement

Authors: Syunsuke Izumi, Hiroyuki Fujisawa, Takeshi Tawara, Katsunori Ueno, M. Hiraoka

685

The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes

Authors: N.O.V. Plank, Liudi Jiang, A.M. Gundlach, Rebecca Cheung

689

Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC

Authors: Nicolas Camara, George Konstantinidis, Konstantinos Zekentes

693