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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436

Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

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Paper Title Page

Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC

Authors: Wook Bahng, Geun Ho Song, Nam Kyun Kim, Sang Cheol Kim, K.S. Seo, Hyoung Wook Kim, Eun Dong Kim

617

Electrical Characterization of Ion-Implanted n⁺/p 6H-SiC Diodes

Authors: Antonella Poggi, Roberta Nipoti, G.C. Cardinali, Francesco Moscatelli

621

High-Sensitivity Ion Beam Analytical Method for Studying Ion-Implanted SiC

Authors: Gábor Battistig, J. García López, N.Q. Khanh, Y. Morilla, M.A. Respaldiza, E. Szilágyi

625

SiC Delta-Doped-Layer Structures and DACFET

Authors: Kunimasa Takahashi, Osamu Kusumoto, Masao Uchida, Kenya Yamashita, Makoto Kitabatake

629

Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC

Authors: Takeshi Ohshima, Akira Uedono, Osamu Eryu, Kin Kiong Lee, Koji Abe, Hisayoshi Itoh, Kenshiro Nakashima

633

Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

Authors: Evgenia V. Kalinina, G. Kholuyanov, Alla A. Sitnikova, V. Kossov, R. Yafaev, Gerhard Pensl, Sergey A. Reshanov, Andrey O. Konstantinov, Anders Hallén

637

Vacancy-Type Defect Distributions of ¹¹B-, ¹⁴N- and ²⁷Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy

Authors: Martin S. Janson, J. Slotte, Andrej Yu. Kuznetsov, Kimmo Saarinen, Anders Hallén

641

Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon Carbide

Authors: Z. Zolnai, N.Q. Khánh, T. Lohner, A. Ster, E. Kótai, I. Vickridge, J. Gyulai

645

First-Principles Studies of N and P Dopant Interactions in SiC: Implications for Co-Doping

Authors: Riccardo Rurali, E. Hernández, Philippe Godignon, Jose Rebollo, P. Ordejón

649

Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N⁺ and P⁺ Ions in 6H-SiC

Authors: Servane Blanqué, R. Pérez, Marcin Zielinski, Julien Pernot, Narcis Mestres, Jordi Pascual, Philippe Godignon, Jean Camassel

653