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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436

Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

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Paper Title Page

Adsorption of Toluene on Si(100) from First Principles

Authors: Francesca Costanzo, PierLuigi Silvestrelli, Carlo Sbraccia, Francesco Ancilotto

575

Atomic Structure of Si-Rich 3C-SiC(001)-(3x2): a Photoelectron Diffraction Study

Authors: A. Tejeda, E.G. Michel, D. Dunham, P. Soukiassian, J.D. Denlinger, E. Rotenberg, Z.D. Hurych, B. Tonner

579

Effects of Initial Nitridation on the Characteristics of SiC-SiO₂ Interfaces

Authors: K.Y. Cheong, Sima Dimitrijev, Ji Sheng Han

583

Ag Growth on 3C-SiC(001) c(2x2) C-Terminated and c(4x2) Si-Terminated Surfaces

Authors: N. Rodriguez, M. D'Angelo, V.Yu. Aristov, P. Soukiassian, A. Lescuras, C. Crotti, M. Pedio, P. Perfetti

587

Modelling the Formation of Nano-Sized SiC on Si

Authors: K.L. Safonov, Alexander A. Schmidt, Dmitri V. Kulikov, Volker Cimalla, Joerg Pezoldt

591

Nanostructure Formation on a Surface of 6H-SiC by Laser Radiation

Authors: Arthur Medvid, L. Fedorenko, Petr M. Lytvyn, N. Yusupov

595

Theoretical Investigation of Adsorption of N-Containing Species at SiC(0001) Surfaces

Authors: Jenny Olander, Karin Larsson

599

Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing

Authors: Yasunori Tanaka, Hisao Tanoue, Kazuo Arai

605

Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC

Authors: Anton J. Bauer, Martin Rambach, Lothar Frey, Roland Weiss, Roland Rupp, Peter Friedrichs, Reinhold Schörner, Dethard Peters

609

Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face

Authors: Junji Senzaki, Kazutoshi Kojima, Takaya Suzuki, Kenji Fukuda

613