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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436

Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

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Table of Contents

Paper Title Page

Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer

Authors: Joakim Eriksson, Niklas Rorsman, Herbert Zirath

741

RF Characteristics of Short-Channel SiC MESFETs

Authors: Hirotake Honda, Makoto Ogata, Hiroshi Sawazaki, Shuichi Ono, Manabu Arai

745

Passivation Effect on Channel Recessed 4H-SiC MESFETs

Authors: Ho Young Cha, Christopher I. Thomas, Goutam Koley, Lester F. Eastman, Michael G. Spencer

749

4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure

Authors: Seiji Suzuki, Shinsuke Harada, Tsutomu Yatsuo, Ryouji Kosugi, Junji Senzaki, Kenji Fukuda

753

Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC

Authors: S. Banerjee, T. Paul Chow, Ronald J. Gutmann

757

Modelling of Radiation Response of p-Channel SiC MOSFETs

Authors: Kin Kiong Lee, Takeshi Ohshima, Hisayoshi Itoh

761

Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET

Authors: Kenichi Ohtsuka, Yoichiro Tarui, Masayuki Imaizumi, Hiroshi Sugimoto, Tetsuya Takami, Tatsuo Ozeki

765

4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications

Authors: Dethard Peters, Adolf Schöner, Peter Friedrichs, Dietrich Stephani

769

Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs

Authors: Sang-Mo Koo, Martin Domeij, Carl Mikael Zetterling, Mikael Östling, Urban Forsberg, Erik Janzén

773

Optimisation of a 4H-SiC Enhancement Mode Power JFET

Authors: Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright, Anthony G. O'Neill

777