Volumes

Materials Science Forum
Vols. 445-446

Materials Science Forum
Vols. 443-444

Materials Science Forum
Vol. 442

Materials Science Forum
Vols. 440-441

Materials Science Forum
Vol. 439

Materials Science Forum
Vols. 437-438

Materials Science Forum
Vols. 433-436

Materials Science Forum
Vols. 426-432

Materials Science Forum
Vols. 423-425

Materials Science Forum
Vols. 419-422

Materials Science Forum
Vols. 416-418

Materials Science Forum
Vols. 414-415

Materials Science Forum
Vol. 413

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436

Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

Export:

ToC:

Table of Contents

Paper Title Page

Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results

Authors: Francesco La Via, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri, Francesco Moscatelli, Andrea Scorzoni, G.C. Cardinali

827

Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process

Authors: Tetsuo Hatakeyama, Mitsuhiro Kushibe, Takatoshi Watanabe, Seiji Imai, Takashi Shinohe

831

Characterization of the Forward Conduction of 4H-SiC Planar Junction Diode

Authors: Toshiyuki Ohno, Takaya Ohno, Kensuke Amemiya, Atsuo Watanabe

835

The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation

Authors: Hans Peter Felsl, Gerhard Wachutka, Roland Rupp

839

1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal

Authors: Lin Zhu, Mayura Shanbhag, T. Paul Chow, Kenneth A. Jones, Matthew H. Ervin, Pankaj B. Shah, Michael A. Derenge, R.D. Vispute, T. Venkatesan, Anant K. Agarwal

843

Simulations of High-Voltage 4H-SiC p⁺nn⁺ Diodes Using a Transient Model for the Deep Boron Level

Authors: Martin Domeij, Uwe Zimmermann, D. Åberg, John Österman, Anders Hallén, Mikael Östling

847

Optical Switch-On of Silicon Carbide Thyristor

Authors: Michael E. Levinshtein, Pavel A. Ivanov, Anant K. Agarwal, John W. Palmour

851

Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base

Authors: Pavel A. Ivanov, Igor V. Grekhov, Andrey O. Konstantinov, Tat'yana P. Samsonova

855

SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth

Authors: Mineo Miura, Shun-ichi Nakamura, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami

859

OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

Authors: S.R. Wang, Christophe Raynaud, Dominique Planson, Mihai Lazar, Jean-Pierre Chante

863