Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

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Paper Title Page

4H-SiC pn Diode Grown by LPE Method for High-Power Applications

Authors: N.I. Kuznetsov, D. Bauman, A. Gavrilin, Liliana Kassamakova, Roumen Kakanakov, G. Sarov, T. Cholakova, Konstantinos Zekentes, Ventzislav I. Dimitrov

867

Characterization of a 4H-SiC High Power Density Controlled Current Limiter

Authors: Dominique Tournier, Philippe Godignon, Josep Montserrat, Dominique Planson, Christophe Raynaud, Mihai Lazar, Jean-Pierre Chante, F. Sarrus, Christian Bonhomme, J.-F. de Palma

871

Forward Dynamic IV Characteristics in Epitaxial and Implanted SiC PiN Power Diodes

Authors: Leonardo M. Hillkirk, Mietek Bakowski

875

Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination

Authors: Igor Sankin, J.B. Dufrene, J. Neil Merrett, Jeff B. Casady

879

Fabrication and Characterisation of High-Voltage SiC-Thyristors

Authors: Volker Zorngiebel, Sigo Scharnholz, Emil Spahn, Pierre Brosselard, N. Arssi, Jean-Pierre Chante, Dominique Planson, Christophe Raynaud, B. Spangenberg, H. Kurz

883

SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC

Authors: Kazuhiro Adachi, I. Omura, Rudi Ono, Johji Nishio, Takashi Shinohe, Hiromichi Ohashi, Kazuo Arai

887

Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices

Authors: Andrej Mihaila, F. Udrea, Philippe Godignon, T. Trajkovic, Gheorghe Brezeanu, Jose Rebollo, José Millan

891

To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes

Authors: Wolfgang Bartsch, Reinhold Schörner, Heinz Mitlehner, Karl Otto Dohnke, Bernd Thomas, Dietrich Stephani

895

Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC

Authors: H. Lendenmann, Peder Bergman, Fanny Dahlquist, Christer Hallin