Authors: Kazutoshi Kojima, Takaya Ohno, Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Johji Nishio, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai

925

Reliability of 4H-SiC p-n Diodes on LPE Grown Layers

Authors: G. Sarov, Roumen Kakanakov, T. Cholakova, Liliana Kassamakova, N. Hristeva, G. Lepoeva, P. Philipova, N.I. Kuznetsov, Konstantinos Zekentes

929

In Situ Studies of Structural Instability in Operating 4H-SiC PiN Diodes

Authors: Augustinas Galeckas, Jan Linnros, P. Pirouz

933

SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted Layers

Authors: Uwe Zimmermann, John Österman, Augustinas Galeckas, Anders Hallén

937

SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range

Authors: Giuseppe Bertuccio, R. Casiraghi, E. Gatti, D. Maiocchi, Filippo Nava, C. Canali, Antonio Cetronio, Claudio Lanzieri

941

Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs

Authors: Hiroshi Yano, Yusuke Maeyama, Y. Furumoto, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki

945

New Tunnel Schottky SiC Devices Using Mixed Conduction Ceramics

Authors: J. Cerdà, J.R. Morante, Anita Lloyd Spetz

949