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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436

Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

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Table of Contents

Paper Title Page

Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar Transistors

Authors: W. Liu, Erik Danielsson, Carl Mikael Zetterling, Mikael Östling

781

Power Amplification in UHF Band Using SiC RF Power BJTs

Authors: Anant K. Agarwal, Craig Capell, Binh Phan, James Milligan, John W. Palmour, Jerry Stambaugh, Howard Bartlow, Ken Brewer

785

Demonstration of Monolithic Darlington Transistors in 4H-SiC

Authors: Yi Tang, T. Paul Chow

789

High-Voltage Modular Switch Based on SiC VJFETs - First Results for a Fast 4.5kV/1.2Ω Configuration

Authors: Peter Friedrichs, Heinz Mitlehner, Reinhold Schörner, Karl Otto Dohnke, Dietrich Stephani

793

Design and Technology Considerations for a RF BJT in SiC

Authors: Mietek Bakowski, Per Ericsson, Chris I. Harris, Andrey O. Konstantinov, Susan Savage, Adolf Schöner

797

Analysis of Unipolar and Bipolar Cascoded Switches with MOS Gate

Authors: Mietek Bakowski

801

SiC Power Devices: How to be Competitive towards Si-Based Solutions?

Authors: Roland Rupp, I. Zverev

805

SiC Power Devices on QUASIC and SiCOI Smart-Cut^® Substrates: First Demonstrations

Authors: Fabrice Letertre, Francois Templier, N. Daval, Edwige Bano, Dominique Planson, Lea Di Cioccio, E. Jalaguier, Jean Marie Bluet, Thierry Billon, Roland Madar, Jean-Pierre Chante

813

Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure

Authors: Fabrizio Roccaforte, Francesco La Via, Antonino La Magna, Salvatore Di Franco, Vito Raineri

819

Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes

Authors: C. Blasciuc-Dimitriu, Alton B. Horsfall, Konstantin Vassilevski, C. Mark Johnson, Nicolas G. Wright, Anthony G. O'Neill

823