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Materials Science Forum Vols. 433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436

ToC:

Table of Contents

Paper Title Page

Continuous Growth of SiC Single Crystal from Ultrafine Particle Precursor
Authors: Yoshimitsu Yamada, Kazukiyo Sagawa, Shinichi Nakashima
79
Defect Reduction in SiC Crystals Grown by the Modified Lely Method
Authors: Mikhail Anikin, Michel Pons, Etienne Pernot, Roland Madar
83
A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
Authors: Ludovic Charpentier, Francis Baillet, Didier Chaussende, Etienne Pernot, Michel Pons, Roland Madar
87
Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
Authors: H. J. Rost, K. Irmscher, J. Doerschel, D. Siche, D. Schulz, Jürgen Wollweber
91
Morphological Features of Sublimation-Grown 4H-SiC Layers
Authors: D. Schulz, J. Doerschel
95
Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth
Authors: Roman Drachev, Dimitri I. Cherednichenko, I.I. Khlebnikov, Yuri I. Khlebnikov, Tangali S. Sudarshan
99
Heat Transfer Modeling of a New Crystal Growth Process
Authors: Francis Baillet, Didier Chaussende, Ludovic Charpentier, Etienne Pernot, Michel Pons, Roland Madar
103
Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution
Authors: Oleg A. Agueev, Alexander M. Svetlichnyi, A.G. Klovo, A.N. Kocherov, D.A. Izotovs
107
Crystal Interface Shape Simulation during SiC Sublimation Growth
Authors: K. Böttcher, D. Schulz
111
Growth at High Rates and Characterization of Bulk 3C-SiC Material
Authors: Gabriel Ferro, Carole Balloud, Sandrine Juillaguet, Patrice Vicente, Jean Camassel, Yves Monteil
115

Showing 21 to 30 of 243 Paper Titles

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