Materials Science Forum Vols. 433-436

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https://doi.org/10.4028/www.scientific.net/MSF.433-436

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Paper Title Page

HTCVD Grown Semi-Insulating SiC Substrates

Authors: Alexsandre Ellison, Björn Magnusson, Nguyen Tien Son, L. Storasta, Erik Janzén

Sublimation-Grown Semi-Insulating SiC for High Frequency Devices

Authors: Stephan G. Müller, M.F. Brady, W.H. Brixius, R.C. Glass, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John W. Palmour, Calvin H. Carter Jr.

Defects in Semi-Insulating SiC Substrates

Authors: Nguyen Tien Son, Björn Magnusson, Z. Zolnai, Alexsandre Ellison, Erik Janzén

Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth

Authors: Matthias Bickermann, Dieter Hofmann, Thomas L. Straubinger, Roland Weingärtner, Albrecht Winnacker

PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals

Authors: Michael Rasp, Thomas L. Straubinger, Erwin Schmitt, Matthias Bickermann, Horst Sadowski, Sergey A. Reshanov

Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC

Authors: Yu.M. Suleimanov, S. Lulu, I. Tarasov, Sergei S. Ostapenko, V.D. Heydemann, Matthew D. Roth, Olof Kordina, Mike F. MacMillan, Stephen E. Saddow

Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method

Authors: Kurt Semmelroth, Frank Schmid, D. Karg, Gerhard Pensl, Manfred Maier, Siegmund Greulich-Weber, Johann Martin Spaeth

Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient

Authors: Z.G. Herro, Matthias Bickermann, Boris M. Epelbaum, Pierre M. Masri, Albrecht Winnacker

Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC

Authors: H. Tanaka, Taro Nishiguchi, Makato Sasaki, Satoru Ohshima, Shigehiro Nishino

Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation

Authors: R.R Ciechonski, Rositza Yakimova, Mikael Syväjärvi, Erik Janzén