Abstract: Crystalline (Sr1-1.5xBix)TiO3 (SBiT) thin films (0.002 ≤ x ≤ 0.5) were prepared by sol-gel on Pt/TiO2/SiO2/Si substrates. Cubic monophasic SBiT films were obtained for samples with x ≤ 0.167. For films with x ≥ 0.267 a second phase identified as Bi4Ti3O12 was observed. The lattice parameter of SBiT films increases with increasing Bi content, similar to the variation observed in SBiT ceramics. No obviously variation of the grain size with the Bi content was observed. The
dielectric constant ε´ at room temperature increases with increasing of Bi concentrations up to x ≤ 0.1. The loss tangent of Bi doped SrTiO3 films is approximately 0.05 and lower than undoped ST films at 10kHz. The higher values of ε´ of Bi doped ST films with x=0.1 and x=0.167 in comparison with undoped films may suppose the appearance of a dielectric anomaly at low temperatures, which will be dependent on the Bi content.
Abstract: Lead-free relaxor ceramics based on sodium-bismuth titanate, (1-x)(Na1/2Bi1/2)TiO3 - xLa(Mg1/2Ti1/2)O3 [(1-x)NBT-xLMT] (0≤x≤0.25), were prepared by both the conventional mixed oxide method and by the Pechini route, and their crystal structure and dielectric properties were investigated. All the compositions studied were found to possess a rhombohedrally distorted crystal
lattice at room temperature. A distortion degree of the unit cell decreases and its volume increases with LMT content. The temperature of the dielectric permittivity maximum does not change with increasing substitution rate. As x is increased, the frequency-dependent dielectric peaks are flattened. The compositional evolution of structure and dielectric characteristics of the ceramics obtained are analysed and discussed in respect to size, charge and polarizability of the cations involved.
Abstract: The microstructure development and the dielectric properties of La4Mg3W3O18 layered oxide were investigated. A strong anisotropic grain growth is revealed in ceramics sintered above 1400oC. The anisotropy of the grain reflects the anisotropic character of the crystal structure. Dielectric measurements yield a relative dielectric permittivity, ε, and a temperature coefficient of the dielectric permittivity, TC ε, to be 21 and 95 ppm K-1, respectively. The positive value of TC ε is assumed to be caused by the octahedral tilting by analogy with the behaviour of other complex ordered perovskites.
Abstract: In recent years several ferroelectric thin films have been studied at microwave
frequencies; lead zirconate titanate (PZT) and barium-strontium titanate (BST) has been widely investigated. However, the microwave dielectric properties of strontium-bismuth tantalate (SBT) have not yet been investigated so widely . The purpose of this work is the microwave characterization of the dielectric properties of an SBT thin film biased at different DC voltages. The dielectric properties of SBT make it a good material for the production of FERAM memories.
Microwave characterizations may show other properties that could promote the SBT as good candidate for capacitors to be employed also in microwave circuits (e.g. resonators and filters). In this work a study of high frequency dielectric properties has been performed and equivalent circuit model has been used to correct the measurements.
Abstract: The copper-niobates, M2+Cu¬2Nb2O8 (M2+ = Zn, Co, Ni, Mg or Ca) have good microwave dielectric properties when sintered between 985 – 1010oC, and 1110oC for CaCu¬2Nb2O8. Therefore they would be potential dielectric Low Temperature Co-fired Ceramic (LTCC) materials if they could be made to sinter below 960oC (melting point of silver). To this end, additions of 3wt% V2O5 were made to ZnCu2Nb2O8, CoCu2Nb2O8, NiCu2Nb2O8, MgCu2Nb2O8 and CaCu2Nb2O8, and their sintering and dielectric behaviour was investigated for samples fired between 800 and 950oC. Doping lowered sintering temperatures to below the 960oC limit in all cases. Doping had the general effect of reducing r, density, Qf and f, although doped CaCu2Nb2O8 had a Qf value of 9300 GHz, nearly four times that of the best undoped sample. When doped and undoped samples all fired to 935oC were compared, all doped samples had greater r and density, and all except ZnCu2Nb2O8 had a smaller f.
Abstract: The development of solid electrolytic tantalum capacitors with MnO2 as counter electrode has been carried out in order to decrease the equivalent series resistance (ESR). Capacitor samples produced under different pyrolysis conditions have been characterized in terms of equivalent circuit parameters. The Ta/Ta2O5/MnO2 system has also been characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). X-ray powder diffraction patterns obtained were inconclusive due to the MnO2 complex structure and to the presence of highly intense tantalum peaks that shadow interesting MnO2 diffraction peaks. Electron diffraction TEM results enabled the characterization of the microstructure and furthermore revealed the complex crystalline structure that affects the electrical properties of the semiconductor layer. A relation between the calculated circuit parameters and microstructure of MnO2 is discussed.
Abstract: The presence of NaNbO3 crystallites in a glass matrix has scientific and technological interest due to their electrical properties and potential applications in microwave, pyroelectric and piezoelectric devices. A glass with the composition 60SiO2-30Na2O-10Nb2O5 (% mole) was prepared by the melt-quenching method. NaNbO3 microcrystallites were precipitated on the surface of the glass by
heat-treatment. Scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, dc and ac conductivity measurements were used in the study of the glass and glassceramic materials. The number of particles, precipitated in the surface of the glass-ceramic samples, increases from the 650 to the 750°C and decrease in the 800°C sample. In all these samples the particles size thickness increases with the rise of the heat-treatment temperature. In the 750 and
800°C samples it was observed the presence of a white surface layer formed by NaNbO3 crystallites aggregations. The dc conductivity (σdc) decreases with the rise of the heat –treatment temperature up to 750°C and the dielectric constant value, at 1kHz and room temperature, has a maximum value of 34.94 for the 800 °C treated sample.
Abstract: Ferromagnetism persisting above 375 K and anisotropic ferromagnetic resonance (FMR) spectra have been detected for the first time in Si co-implanted with Mn and As and annealed under appropriate conditions. For comparison, semi-insulating GaAs samples have been implanted with the same ions and subsequently annealed. They also exhibit ferromagnetism with a Curie temperature well in excess of 375 K. High-resolution transmission electron microscopy (TEM) performed on the samples with the best magnetic characteristics has shown the presence of
nanoclusters due to the segregation of the implanted species in both Si and GaAs. The angular dependence of the FMR spectra also reveals the existence of magnetic clusters with the hard magnetization axis aligned along the four equivalent <111> crystal axes. The spectra are very similar in Si and GaAs, indicating that the clusters in both materials probably consist of hexagonal MnAs.
Abstract: This work reports on the synthesis of CrO2 thin films by atmospheric pressure CVD using chromium trioxide (CrO3) and oxygen. Highly oriented (100) CrO2 films containing highly oriented (0001) Cr2O3 were grown onto Al2O3(0001) substrates. Films display a sharp magnetic transition at 375 K and a saturation magnetization of 1.92 µB/f.u., close to the bulk value of 2 µB/f.u. for the CrO2.