Phonons in SiC from INS, IXS, and Ab-Initio Calculations

Dieter Strauch; B. Dorner; A.A. Ivanov; M. Krisch; J. Serrano; Alexey Bosak; Wolfgang J. Choyke; B. Stojetz; Michael Malorny

doi:10.4028/www.scientific.net/MSF.527-529.689

Paper Titles

Temperature Induced Phase Transformation on the 4H-SiC(11-20) Surface
p.673

SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)
p.677

Experimental Study of the Formation and Oxidation of the Sm/4H-SiC Surface Alloy
p.681

Low Energy Ion Modification of 3C-SiC Surfaces
p.685

Phonons in SiC from INS, IXS, and Ab-Initio Calculations
p.689

Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition
p.695

Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single Crystals
p.699

Thermal Lens Technique for the Determination of SiC Thermo-Optical Properties
p.703

Wannier-Stark Ladder and Negative Differential Conductance in 4H-SiC
p.707

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Phonons in SiC from INS, IXS, and Ab-Initio...

Phonons in SiC from INS, IXS, and Ab-Initio Calculations

Abstract:

Preliminary results for the phonon dispersion curves of hexagonal 4H-SiC from experimental inelastic neutron (INS) and X-ray scattering (IXS) are reported and contrasted with those of cubic 3C-SiC and silicon. The experimental frequencies and scattering intensities are in excellent agreement with those from first-principles calculations using density-functional methods. The relative merits of the two experimental techniques and aspects of the density functional perturbation theory and the so-called frozen phonon method for the determination of the basic phonon properties are briefly outlined.