Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices

Marco Buzzo; Mauro Ciappa; Michael Treu; Wolfgang Fichtner

doi:10.4028/www.scientific.net/MSF.527-529.787

Paper Titles

A Simple Method to Synthesize Nano-Sized 3C-SiC Powder Using Hexamethyldisilane in a CVD Reactor
p.767

Fabrication and Electrical Transport Properties of CVD Grown Silicon Carbide Nanowires (SiC NWs) for Field Effect Transistor
p.771

Thermodynamic Analysis of Synthetic Potentialities of the nSiC + SiO₂ Starting System: SiC Gas-Phase Transport via Si(g) and CO(g)
p.775

Ion Implantation Processing and Related Effects in SiC
p.781

Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices
p.787

Annealing Behavior of N⁺-Implantation-Induced Defects in SiC at Low Temperatures
p.791

Impact of Annealing Temperature Ramps on the Electrical Activation of N⁺ and P⁺ Co-Implanted SiC Layers
p.795

Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)
p.799

Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA Equipment
p.803

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Advances in Two-Dimensional Dopant Profiling and...

Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices

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Silicon Carbide and Related Materials 2005

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

787-790

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.787

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Online since:

October 2006

Authors:

Marco Buzzo, Mauro Ciappa, Michael Treu, Wolfgang Fichtner

Keywords:

Dopant Profile, Sample Preparation, SCM, SE Potential Contrast

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References

[1] M. Stangoni, M. Ciappa, M. Buzzo, M. Leicht, and W. Fichtner: Microelectronics Reliability 42 (2002), pp.1701-1706.

DOI: 10.1016/s0026-2714(02)00215-9

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