Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

787-790

DOI:

10.4028/www.scientific.net/MSF.527-529.787

Citation:

M. Buzzo et al., "Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices", Materials Science Forum, Vols. 527-529, pp. 787-790, 2006

Online since:

October 2006

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$35.00

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