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HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Formation of Deep Traps at the 4H-SiC/SiO2...

Formation of Deep Traps at the 4H-SiC/SiO₂ Interface when Utilizing Sodium Enhanced Oxidation

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Silicon Carbide and Related Materials 2006

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

517-520

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.517

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Online since:

September 2007

Authors:

Fredrik Allerstam, G. Gudjónsson, E.Ö. Sveinbjörnsson, T. Rödle, R. Jos

Keywords:

Deep Interface Trap, Interface States (or Traps), Sodium

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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