Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth

Kazutoshi Kojima; Satoshi Kuroda; Hajime Okumura; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.556-557.85

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HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Effect of Additional Silane on In Situ H2 Etching...

Effect of Additional Silane on In Situ H₂ Etching prior to 4H-SiC Homoepitaxial Growth

Abstract:

We have investigated the influence of in-situ H2 etching on the surface morphology of the 4H-SiC substrate prior to homoepitaxial growth. In this study, we varied the types of gas atmosphere during in-situ H2 etching; namely, hydrogen (H2) alone, hydrogen-propane (H2+C3H8), and hydrogen-silane (H2+SiH4). We found that in-situ H2 etching using H2 + SiH4 significantly improved the surface morphology of 4H-SiC substrate just after in-situ H2 etching. By adding SiH4, formation of bunched step structure during in-situ H2 etching could be significantly suppressed. In addition, H2 etching using H2 + SiH4 was able to remove scratches by etching a thinner layer than that using H2 alone. We also discussed the in-situ H2 etching mechanism under the additional SiH4 condition.

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Materials Science Forum (Volumes 556-557)

Pages:

85-88

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.85

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Online since:

September 2007

Authors:

Kazutoshi Kojima, Satoshi Kuroda, Hajime Okumura, Kazuo Arai

Keywords:

4H-SiC, Homoepitaxial Growth, In Situ H₂ Etching, Morpholoy, Silane

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