Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth

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We have investigated the influence of in-situ H2 etching on the surface morphology of the 4H-SiC substrate prior to homoepitaxial growth. In this study, we varied the types of gas atmosphere during in-situ H2 etching; namely, hydrogen (H2) alone, hydrogen-propane (H2+C3H8), and hydrogen-silane (H2+SiH4). We found that in-situ H2 etching using H2 + SiH4 significantly improved the surface morphology of 4H-SiC substrate just after in-situ H2 etching. By adding SiH4, formation of bunched step structure during in-situ H2 etching could be significantly suppressed. In addition, H2 etching using H2 + SiH4 was able to remove scratches by etching a thinner layer than that using H2 alone. We also discussed the in-situ H2 etching mechanism under the additional SiH4 condition.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

85-88

Citation:

K. Kojima et al., "Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth", Materials Science Forum, Vols. 556-557, pp. 85-88, 2007

Online since:

September 2007

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$38.00

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