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Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route

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Abstract:

A simplified deposition model, involving both the description of the deposition and of the film morphology was adopted to quantitatively understand the experimental trends encountered in the epitaxial silicon carbide deposition in an industrial hot wall reactor. The attention was focused on the system involving chlorinated species because its really superior performances with respect the traditional silane/hydrocarbons process. The evolution of the crystalline structure (i.e., from poly to single) and of the surface roughness can be understood by simply comparing two characteristic times, like those inherent the surface diffusion and the matter supply to the surface.

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Silicon Carbide and Related Materials 2006 View Preview

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

93-96

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.93

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Online since:

September 2007

Authors:

Maurizio Masi, Alessandro Veneroni, A. Fiorucci, Francesco La Via, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, Gian Luca Valente, Danilo Crippa

Keywords:

Chemical Kinetics, Chemical Vapor Deposition Processes, Models of Film Growth, Theory of Film Growth

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

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