Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds

Abstract:

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Epitaxial growth of cubic silicon carbide on 6H-SiC substrates, and 6H-SiC substrates with (111) 3C-SiC buffer layer, deposited by vapour liquid solid mechanism, was compared. The morphological details of the grown layers were studied by optical microscopy and their microstructure by transmission electron microscopy. The influence of the substrate on the nucleation of 3C-SiC, the initial homoepitaxial 6H-SiC nucleation before 3C-SiC as well as the formation of defects, are discussed.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

175-178

DOI:

10.4028/www.scientific.net/MSF.645-648.175

Citation:

R. Vasiliauskas et al., "Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds", Materials Science Forum, Vols. 645-648, pp. 175-178, 2010

Online since:

April 2010

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Price:

$35.00

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