SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition

Bharat Krishnan; Siva Prasad Kotamraju; Siddarth G. Sundaresan; Yaroslav Koshka

doi:10.4028/www.scientific.net/MSF.645-648.187

Paper Titles

Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates
p.171

Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
p.175

Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy
p.179

Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
p.183

SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition
p.187

Identification of Defects Limiting the Carrier Lifetime in n^- Epitaxial Layers of 4H-SiC
p.193

Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers
p.199

Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
p.203

Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method
p.207

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SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition

Abstract:

Growth of SiC nanowires on commercial 4H-SiC substrates by chemical vapor deposition is reported. The main objective was to explore a possibility of reproducing the substrate polytype in order to obtain SiC NWs specifically composed of the hexagonal 4H-SiC polytype. The growth experiments were conducted in a hot-wall CVD reactor with H2 as the carrier gas, SiCl4 as the silicon source, and CH3Cl as the carbon source. Vapor-liquid-solid (VLS) growth mode was enabled by using metal nano-particle on the surface of the 4H-SiC substrates. Formation of nanowires or bigger nano-cones was achieved depending on the temperature and the metal catalyst used. Only SiC phase with no presence of Si was confirmed by X-ray diffraction for the growth temperatures down to 1050°C. The low temperature photoluminescence spectra measured on as-grown NWs showed clear 4H-SiC nitrogen bound excitons in some of the samples, particularly when in-situ N2 doping was used. The density of stacking faults detected by TEM strongly depended on the growth conditions.