Growth of SiC nanowires on commercial 4H-SiC substrates by chemical vapor deposition is reported. The main objective was to explore a possibility of reproducing the substrate polytype in order to obtain SiC NWs specifically composed of the hexagonal 4H-SiC polytype. The growth experiments were conducted in a hot-wall CVD reactor with H2 as the carrier gas, SiCl4 as the silicon source, and CH3Cl as the carbon source. Vapor-liquid-solid (VLS) growth mode was enabled by using metal nano-particle on the surface of the 4H-SiC substrates. Formation of nanowires or bigger nano-cones was achieved depending on the temperature and the metal catalyst used. Only SiC phase with no presence of Si was confirmed by X-ray diffraction for the growth temperatures down to 1050°C. The low temperature photoluminescence spectra measured on as-grown NWs showed clear 4H-SiC nitrogen bound excitons in some of the samples, particularly when in-situ N2 doping was used. The density of stacking faults detected by TEM strongly depended on the growth conditions.